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BS IEC 60747-9:2007

Standard Number
BS IEC 60747-9:2007
Title
Semiconductor devices. Discrete devicesInsulated-gate bipolar transistors (IGBTs)
Status
Current
Publication Date
30 November 2007
Cross References
IEC 60747-1:2006, IEC 60747-2, IEC 60747-6, IEC 61340, IEC 60050-521:2002, IEC 60747-7:2000
Replaces
BS IEC 60747-9:1998

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Descriptors
Semiconductor devices, Integrated circuits, Electronic equipment and components, Bipolar transistors, Transistors, Electrical insulation, Symbols, Voltage, Electric current, Electrical properties and phenomena, Thermal resistance, Electrical resistance, Time, Ratings, Temperature, Rated voltage, Rated current, Rated power, Capacitance, Leakage currents, Response time, Electrical safety, Electrical measurement, Voltage measurement, Current measurement, Dissipation factor, Circuits, Testing conditions, Graphic symbols
Title in French
Dispositifs semiconducteurs. Dispositifs discrets. Transistors bipolaires grille isole (IGBT)
Title in German
Halbleiterbauelemente. Einzel-Halbleiterbauelemente. Bipolartransistoren mit isoliertem Gate (IGBTs)
Pages
60
File Size
1.644 MB
Price
196.00

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